Low-Energy Shared-Current Write Schemes for Voltage-Controlled Spin-Orbit-Torque Memory
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, USA
Funder
Air Force Research Laboratory (AFRL), Defense Advanced Research Projects Agency
NSF Translational Applications of NanoscaleMultiferroic Systems (TANMS) Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/10025571/10008199-aam.pdf
Reference47 articles.
1. Analysis and Compact Modeling of Magnetic Tunnel Junctions Utilizing Voltage-Controlled Magnetic Anisotropy
2. Modeling of Voltage-Controlled Spin–Orbit Torque MRAM for Multilevel Switching Application
3. Analog to Stochastic Bit Stream Converter Utilizing Voltage-Assisted Spin Hall Effect
4. Voltage-controlled magnetoelectric memory and logic devices
5. A thermodynamic core using voltage-controlled spin–orbit-torque magnetic tunnel junctions
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM;IEEE Transactions on Electron Devices;2024-07
2. Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque;IEEE Electron Device Letters;2024-05
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