Impact of Stack Engineering on HfOₓ/Al:HfOₓ-Based Flexible Resistive Memory Devices and Its Synaptic Characteristics
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, National Institute of Technology Durgapur, Durgapur, India
2. Department of Physics, National Institute of Technology Durgapur, Durgapur, India
Funder
Department of Science and Technology (DST) Science and Engineering Research Board (SERB) Program, Government of India
University Grants Commission (UGC) National Eligibility Test (NET) Junior Research Fellow (JRF) Fellowship
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09729969.pdf?arnumber=9729969
Reference53 articles.
1. Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation
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3. Characteristics of flexible and transparent Eu2O3 resistive switching memory at high bending condition
4. Memory characteristics of flexible resistive switching devices with triangular-shaped silicon nanowire bottom electrodes
5. High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition
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