Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs-Reference-Cited by-同舟云学术

Enhancing Reliability and 2 mm-Axial Mechanical Bending Endurance by Gate Insulator Improvements in Flexible Polycrystalline Silicon TFTs

Published:2022-05 Issue:5 Volume:69 Page:2423-2429
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zheng Yu-Zhe¹,Chen Po-Hsun²^ORCID,Chang Ting-Chang³^ORCID,Tsai Tsung-Ming¹^ORCID,Zhou Kuan-Ju⁴,Tu Yu-Fa⁵^ORCID,Wang Yu-Xuan⁶,Wu Chia-Chuan⁷,Chen Yu-An⁴,Sun Pei-Jun¹,Chen Juan-Jie⁴,Tu Hong-Yi¹,Hung Yang-Hao⁴,Lin Yu-Shan⁴,Ciou Fong-Min⁴,Shih Yu-Shan⁴,Huang Hui-Chun¹

Affiliation:

1. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Applied Science, ROC Naval Academy, Kaohsiung, Taiwan

3. Center of Crystal Research and the Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Department of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

6. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

7. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan

Funder

Ministry of Science and Technology in Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09737290.pdf?arnumber=9737290

Reference45 articles.

1. Characteristics of low‐temperature and low‐energy plasma‐enhanced chemical vapor deposited SiO2

2. Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors

3. Analysis of width edge effects in advanced isolation schemes for deep submicron CMOS technologies

4. Degradation Model of Self-Heating Effects in Silicon-on-Glass TFTs

5. Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

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