Design and Analysis of p-i-n-Type MoS2/Ge Heterojunction Photodetector
Author:
Affiliation:
1. School of Microelectronics, Xidian University, Xi’an, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09936593.pdf?arnumber=9936593
Reference32 articles.
1. Hybrid 2D-0D MoS2-PbS Quantum Dot Photodetectors
2. MoS2 -HgTe Quantum Dot Hybrid Photodetectors beyond 2 µm
3. In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared
4. Ultrahigh-gain photodetectors based on atomically thin graphene-MoS2 heterostructures;zhang;Sci Rep,2014
5. High-performance MoS_2/Si heterojunction broadband photodetectors from deep ultraviolet to near infrared
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1. High performance Ge/MoS2 heterojunction photodetector with a short active region;Applied Physics Letters;2024-07-29
2. Modeling of MoS2/Si heterostructure to study charge transfer dynamics;Nano Express;2024-05-24
3. Investigations of MoS2-Based Self-Powered M–S–M Photodetectors with Low Defect Density and Fast Response and Low-Temperature Characteristics;ACS Applied Electronic Materials;2024-01-23
4. 2D MoS2 under switching field conditions: Study of high-frequency noise velocity fluctuations;Applied Physics Letters;2023-07-31
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