Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs-Reference-Cited by-同舟云学术

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Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs

Published:2022-10 Issue:10 Volume:69 Page:5503-5508
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun Haozhe¹,Lei Wen²,Chen Jianguo³,Jin Yufeng²,Wang Maojun¹^ORCID

Affiliation:

1. School of Integrated Circuits, Peking University, Beijing, China

2. School of Electronic and Computer Engineering, Shenzhen Graduate School, Peking University, Shenzhen, China

3. Founder Microelectronics International Corporation Ltd., Shenzhen, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shenzhen Science and Technology Innovation Committee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09882038.pdf?arnumber=9882038

Reference19 articles.

1. TDDB Mechanism in a-Si/TiO2 Nonfilamentary RRAM Device

2. Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs

3. Reliability Analysis of LPCVD SiN Gate Dielectric for AlGaN/GaN MIS-HEMTs

4. Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

5. Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

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1. Reliability challenges in CMOS technology: A manufacturing process perspective;Microelectronic Engineering;2023-09

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