Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure With Robust Surge Current Ruggedness and Transient Energy Sustaining Capability
Author:
Affiliation:
1. Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9901396/09868793.pdf?arnumber=9868793
Reference47 articles.
1. Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
2. Highly efficient GaN-based high-power flip-chip light-emitting diodes
3. 1000-W Resistive Energy Dissipating Capability Against Inductive Transients Demonstrated in Non-Avalanche AlGaN/GaN Schottky Diode
4. Dynamic Breakdown Voltage of GaN Power HEMTs
5. Single Pulse Unclamped-Inductive-Switching Induced Failure and Analysis for 650 V p-GaN HEMT
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1. Normally-Off Schottky-Gate p-GaN HEMTs with Enhanced Irradiation Hardness;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics;Nature Communications;2023-07-25
3. Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP;Micromachines;2023-06-13
4. Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes;Journal of Vacuum Science & Technology B;2023-01
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