A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement-Reference-Cited by-同舟云学术

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A Novel S-Gate-Assisted SOI n-MOSFET for Total Ionizing Dose Radiation Reinforcement

Published:2022-03 Issue:3 Volume:69 Page:956-961
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Yuntao¹,Li Mengyao²^ORCID,Fang Shuo¹^ORCID,Wang Ying³^ORCID

Affiliation:

1. College of Information and Communication Engineering, Harbin Engineering University, Harbin, China

2. East China Institute of Photo-Electronic Integrated Device, Suzhou, China

3. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China

Funder

National Research and Development Program for Major Research Instruments of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09693907.pdf?arnumber=9693907

Reference27 articles.

1. Frontiers of silicon-on-insulator

2. Design and evaluation of SOI devices for radiation environments

3. Investigation of total ionizing dose effect on SOI tunnel FET

4. Total-Ionizing-Dose Effects in Modern CMOS Technologies

5. Threshold voltage of sub-10-nm-thick SOI MOSFET’s at cryogenic temperature and quantum effects;omura;Proc IEEE Int SOI Conf,2004

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanical properties of the interstratified hydrate-bearing sediment in permafrost zones;Energy;2023-11

2. Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET;IEEE Electron Device Letters;2022-11

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