Hybrid GaO/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity<sub /> <sub />-Reference-Cited by-同舟云学术

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Hybrid GaO/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity

Published:2022-11 Issue:11 Volume:69 Page:6166-6170
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Zupin¹,Chu Chunshuang¹^ORCID,Wang Bingxiang²,Huang Guansen¹,Jiang Ke²,Zhang Yonghui¹^ORCID,Sun Xiaojuan²,Zhang Zi-Hui¹^ORCID,Li Dabing²

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Tianjin, P. R. China

2. State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China

Funder

National Natural Science Foundation of China

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Research Fund by Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9926983/09901482.pdf?arnumber=9901482

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of vacancy defects on the electronic characteristics of the β-Ga2O3/AlN interface;Journal of Crystal Growth;2024-02

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