Ion Intercalation Enabled Tunable Frequency Response in Lithium Niobite Memristors
Author:
Affiliation:
1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA
Funder
U.S. Air Force Office of Scientific Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10025571/09991248.pdf?arnumber=9991248
Reference34 articles.
1. Modeling and Applications of Electrochemical Impedance Spectroscopy (EIS) for Lithium-ion Batteries
2. Technology agnostic frequency characterization methodology for memristors
3. Holographic storage dynamics in lithium niobate: theory and experiment
4. Memristive devices for neuromorphic computing applications;shank,2016
5. Topochemical reactions of LixNbO2
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1. Hybrid Dry and Wet Etching of LiNbO3 Domain-Wall Memory Devices with 90° Etching Angles and Excellent Electrical Properties;ACS Applied Materials & Interfaces;2023-10-26
2. Dynamical memristive neural networks and associative self-learning architectures using biomimetic devices;Frontiers in Neuroscience;2023-04-20
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