Vertical SiC Photoconductive Switch With Axial Optical Internal Reflection Trap
Author:
Affiliation:
1. College of Advanced Interdisciplinary Studies, Nanhu Laser Laboratory, National University of Defense Technology, Changsha, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09851622.pdf?arnumber=9851622
Reference26 articles.
1. Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches
2. MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor
3. Carrier lifetime in conductive and vanadium-doped 6H-SiC substrates
4. Wide Bandgap Extrinsic Photoconductive Switches
5. Optoelectronic Microwave Power Amplifiers
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