Bandgap Engineering of Al x Zn1-x O Deposited by Mist Chemical Vapor Deposition for Photodetector Applications: From UV-A to UV-C
Author:
Affiliation:
1. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09932576.pdf?arnumber=9932576
Reference44 articles.
1. V-Pits-Induced Photoresponse Enhancement in AlGaN UV-B Photodetectors on Si (111)
2. Surface Modification of AlGaN Solar-Blind Ultraviolet MSM Photodetectors With Octadecanethiol
3. Enhancement of optoelectronic properties of ZnO thin films by Al doping for photodetector applications
4. The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes
5. Bond dissociation energies;luo;CRC Handbook of Chemistry and Physics,2007
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of Doping Concentration on Photoresponse Characteristics of β-Ga2O3 Solar-Blind Photodetectors;IEEE Sensors Journal;2024-02-01
2. Al0.5Zn0.5O:In-Based Photodetectors: Metal–Semiconductor–Metal and Heterojunction for Deep-UV Sensing.;IEEE Sensors Journal;2023-10-01
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