Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor
Author:
Affiliation:
1. Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan
Funder
JSPS Bilateral Joint Research Projects/Seminars
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9901396/09870689.pdf?arnumber=9870689
Reference27 articles.
1. Voltage Overshoot Suppression for SiC MOSFET-Based DC Solid-State Circuit Breaker
2. Degradation characteristics of SiC power devices for DC circuit breaker by repetitive unclamped inductive switching test
3. Avalanche ruggedness of parallel SiC power MOSFETs
4. Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to olid-state circuit breakers
5. Avalanche current balancing using parallel connection of SiC-MOSFET/SiC-JFETs with cascode connection
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping;IEEE Open Journal of Power Electronics;2024
2. Reliability investigation of repeated unclamped inductive switching in a diode-clamped SiC circuit breaker;Microelectronics Reliability;2023-11
3. Machine Learning Enabled Cluster Grouping of Varistors in Parallel-Structured DC Circuit Breakers;IEEE Open Journal of Power Electronics;2023
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