Enhanced Negative Bias Illumination Stability of ZnO Thin Film Transistors by Using a Two-Step Oxidation Method-Reference-Cited by-同舟云学术

Enhanced Negative Bias Illumination Stability of ZnO Thin Film Transistors by Using a Two-Step Oxidation Method

Published:2022-05 Issue:5 Volume:69 Page:2404-2408
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Xue¹^ORCID,Wan Jiaxian²^ORCID,Gao Juan¹,Wu Hao²,Liu Chang²^ORCID

Affiliation:

1. School of Mechanics and Optoelectronics Physics, Anhui University of Science and Technology, Huainan, China

2. Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and the School of Physics and Technology, Wuhan University, Wuhan, China

Funder

National Key Research and Development Plan

NSFC

Anhui Provincial Natural Science Foundation

Anhui University of Science and Technology Launched the High-Level Introduction of Talents Research Fund

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09741852.pdf?arnumber=9741852

Reference27 articles.

1. Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping

2. O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors

3. High Field Effect Mobility, Amorphous In-Ga-Sn-O Thin-Film Transistor With No Effect of Negative Bias Illumination Stress

4. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors;ide;Appl Phys Lett,2011

5. Effective encapsulation of ZnO thin film transistors controlled by thermal energy

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