Intrablock Wear Leveling to Counter Layer-to-Layer Endurance Variation of 3-D NAND Flash Memory
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA
Funder
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/10004030/9966490-aam.pdf
Reference17 articles.
1. Mitigating Pillar-to-Pillar Variability of Ground Select Transistor in 3-D NAND Flash Memory
2. The Effects of Taper-Angle on the Electrical Characteristics of Vertical NAND Flash Memories
3. A Rigorous 3-D NAND Flash Cost Analysis
4. Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation
5. Layer-Aware Program-and-Read Schemes for 3D Stackable Vertical-Gate BE-SONOS NAND Flash Against Cross-Layer Process Variations
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Life-after-Death: Exploring Thermal Annealing Conditions to Enhance 3D NAND SSD Endurance;Proceedings of the 16th ACM Workshop on Hot Topics in Storage and File Systems;2024-07-08
2. Random Flip Bit Aware Reading for Improving High-Density 3-D NAND Flash Performance;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-05
3. Data-Aware 3-D TLC NAND Flash Memory Reliability Optimization;IEEE Transactions on Electron Devices;2024
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3