Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing-Reference-Cited by-同舟云学术

Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing

Published:2022-07 Issue:7 Volume:69 Page:3775-3782
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gourishetty Raveesh¹^ORCID,Shriram Saranya Reddy¹^ORCID,Panda Debi Prasad²^ORCID,Chakrabarti Subhananda¹^ORCID

Affiliation:

1. IIT Bombay, Maharashtra, Powai, India

2. Atomic, Molecular and Optical Physics Division, Physical Research Laboratory, Ahmedabad, India

Funder

SERB

DST Nano Mission

DST-SERI

Indian Space Research Organization

Abdul Kalam Technology Innovation National Fellowship

Prime Minister’s Research Fellowship

Department of Science and Technology, India, through the DST-INSPIRE Faculty Fellowship Scheme

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09780568.pdf?arnumber=9780568

Reference24 articles.

1. Carrier dynamics in submonolayer InGaAs∕GaAs quantum dots

2. Evaluation of In(Ga)As capping in a multilayer coupled InAs quantum dot system: Growth strategy involving the same overgrowth percentage

3. Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and structural characteristics

4. Tuning self-assembled InAs quantum dots by rapid thermal annealing

5. Tuning the energy levels of self-assembled InAs quantum dots by rapid thermal annealing

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