Estimation of Trapping Induced Dynamic Reduction in 2DEG Density of GaN-Based HEMTs by Gate-Lag DCT Technique
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology (IIT) Dharwad, Dharwad, Karnataka, India
2. XLIM Laboratory, CNRS, UMR 7252, University of Limoges, Limoges, France
Funder
Agence Nationale de la Recherche (ANR) and Direction Générale de l’Armement (DGA) France
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9864631/09845377.pdf?arnumber=9845377
Reference28 articles.
1. Bias Dependence Model of Peak Frequency of GaN Trap in GaN HEMTs Using Low-Frequency Y₂₂ Parameters
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5. GaN-based power devices: Physics, reliability, and perspectives
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