New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors
Author:
Affiliation:
1. School of Engineering, Liverpool John Moores University, Liverpool, U.K.
2. IMEC, Leuven, Belgium
3. Center for Spintronics and Quantum Systems, and the School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, China
Funder
EPSRC of U.K.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10025571/10003183.pdf?arnumber=10003183
Reference29 articles.
1. Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
2. Te-based amorphous binary OTS device with excellent selector characteristics for X-point memory applications;koo;Proc IEEE Symp VLSI Technol,2016
3. Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance
4. Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme
5. Electrical Conduction Anomaly of Semiconducting Glasses in the System As-Te-I
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1. Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in Nanopatterns;Chemistry of Materials;2024-06-11
2. Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous network;Journal of Materials Chemistry C;2024
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