Overlapping-Mode Extended Interaction Klystrons for Broadband Terahertz Power Amplifiers-Reference-Cited by-同舟云学术

Overlapping-Mode Extended Interaction Klystrons for Broadband Terahertz Power Amplifiers

Published:2022-03 Issue:3 Volume:69 Page:1486-1491
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Guo Naining¹^ORCID,Qu Zhaowei¹,Xue Qianzhong¹^ORCID,Liu Kegang¹^ORCID,Song Wenke¹^ORCID,Zhang Xu¹^ORCID,Zhao Ding¹^ORCID,Ding Haibing¹,Feng Jinjun²^ORCID

Affiliation:

1. Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing, China

2. National Key Laboratory of Science and Technology on Vacuum Electronics, Beijing Vacuum Electronics Research Institute, Beijing, China

Funder

National Key Basic Research Program of China

National Nation Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09712648.pdf?arnumber=9712648

Reference18 articles.

1. Compact sources of high RF power for DNP applications

2. Study of a 0.34-THz Ladder-Type Extended Interaction Klystron With Narrow Coupling Cavities

3. An effective method to increase bandwidth of EIK at 0.34 THz

4. Increasing the bandwidth of an extended interaction klystron at 0.34 THz by staggered tuning of the multi-gap cavities

5. Theoretical Design and Numerical Simulation of Beam-Wave Interaction for $G$ -Band Unequal-Length Slots EIK With Rectangular Electron Beam

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