Evaluation of Metal–Semiconductor Contact Quality: Correlation of 1/f Noise and Nonlinearity
Author:
Affiliation:
1. Department of Electronics Fundamentals, Rzeszow University of Technology, Rzeszów, Poland
2. Institute of Materials Engineering, Center for Microelectronics and Nanotechnology, University of Rzeszow, Rzeszów, Poland
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09944975.pdf?arnumber=9944975
Reference36 articles.
1. Formulas of 1/f noise in Schottky barrier diodes under reverse bias
2. 1/f noise characterization of Ir/p‐Si and Ir/p‐Si1−xGex low Schottky barrier junctions
3. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode
4. Temperature dependence of 1/f noise in Pd/n-GaAs Schottky barrier diode
5. low-frequency excess noise in metal—silicon schottky barrier diodes;hsu;IEEE Transactions on Electron Devices,1970
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