Divulge of Root Cause Failure in Individual Cells of 2× nm Technology DDR4 DRAM at Operating Temperature-Reference-Cited by-同舟云学术

Divulge of Root Cause Failure in Individual Cells of 2× nm Technology DDR4 DRAM at Operating Temperature

Published:2022-05 Issue:5 Volume:69 Page:2338-2345
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shahzadi Nosheen¹^ORCID,Park Myungsang²^ORCID,Yun Donghyuk²^ORCID,Baeg Sanghyeon²^ORCID

Affiliation:

1. Department of Electronic Engineering, Hanyang University, Ansan, Gyeonggi-do 15588, Republic of Korea, on study leave from the University of Engineering and Technology, Lahore, Pakistan

2. Department of Electronic Engineering, Hanyang University, Ansan, Gyeonggi-do, Republic of Korea

Funder

Korea Institute for Advancement of Technology (KIAT) through the Korean Government [Ministry of Trade, Industry and Energy (MOTIE)]

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, Information and Communication Technologies (ICT) and Future Planning

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09743486.pdf?arnumber=9743486

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5. Fin and recess channel MOSFET (FiReFET) for performance enhancement of sub-50 nm DRAM cell;song;Proc Int Semiconductor Device Res Symp,2007