Epitaxial Growth and Characterization of Self-Doping ${\rm Si}_{1-{\rm x}}{\rm Ge}_{\rm x}{\rm/Si}$ Multi-Quantum Well Materials-Reference-Cited by-同舟云学术

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Epitaxial Growth and Characterization of Self-Doping ${\rm Si}_{1-{\rm x}}{\rm Ge}_{\rm x}{\rm/Si}$ Multi-Quantum Well Materials

Published:2014-02 Issue:1 Volume:23 Page:213-219
ISSN:1057-7157
Container-title:Journal of Microelectromechanical Systems
language:
Short-container-title:J. Microelectromech. Syst.

Author:

Jiang Bo,Dong Tao,Su Yan,He Yong,Wang Kaiying

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Mechanical Engineering

Link

http://xplorestaging.ieee.org/ielx7/84/6729039/06558494.pdf?arnumber=6558494

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Magnetotransport, spin reorientation, and anomalous ferrimagnetic-to-antiferromagnetic phase transition in epitaxial Mn2Sb alloy thin films;Acta Materialia;2023-10

2. The model and stress analysis of self-doping SiGe/Si multi-quantum wells applied in uncooled infrared focal plane array;Optik;2019-12

3. Two-phase flow in microscale and nanoscale;Thermohydrodynamic Programming and Constructal Design in Microsystems;2019

4. Comprehensive Predictive Device Modeling and Analysis of a Si/Si1-x Ge x Multiquantum-Well Detector;IEEE Transactions on Electron Devices;2018-10

5. Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity;Infrared Technology and Applications XLIV;2018-05-29

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