Failure mode and lifetime evaluation of 808nm high power semiconductor laser bars-Reference-Cited by-同舟云学术

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Failure mode and lifetime evaluation of 808nm high power semiconductor laser bars

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Liao Wenyuan¹,Zheng Linting²,Gao Rui¹,Liu Yuebo¹,Li Shuwang¹,Lu Guoguang¹

Affiliation:

1. The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology,Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China

2. The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology,Reliability Research and Analysis Center,Guangzhou,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873498.pdf?arnumber=9873498

Reference11 articles.

1. Selection of a Laser Reliability Assurance Strategy for a Long-Life Application

2. Reliability studies of the high-power semiconductor lasers[J];lu;Laser Magazine,2005

3. The reliability of a practical Ga<inf>1-x</inf>Al<inf>x</inf>As laser device

4. Highly reliable perform ance of 980-nm pump lasers predicted by optical over-stress life tests;arakida;Technical Digest OFC'97,0

5. Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation

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