Effect of Crystal Plane Spacing on Interface Stability of CoSn3(110)/Cu6Sn5(100) in IC Package-Reference-Cited by-同舟云学术

Effect of Crystal Plane Spacing on Interface Stability of CoSn₃(110)/Cu₆Sn₅(100) in IC Package

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Chen Yuqian¹,Yang Donghua²,Chen Tao¹,Rong Jing¹,Hu Jie¹,Guo Lei¹,Chang Jiwei³

Affiliation:

1. Chongqing University of Technology,College of Materials Science and Engineering,Chongqing,China

2. Chongqing University of Technology,Chongqing Municipal Engineering Research Center of Institutions of Higher Education for Special Welding Materials and Technology,Chongqing,China

3. Chongqing University of Technology,College of Material Science and Engineering,Chongqing,China

Funder

National Natural Science Foundation of China

Chongqing Municipal Education Commission

Chongqing University of Technology

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873377.pdf?arnumber=9873377

Reference8 articles.

1. The Mechanical Properties and Elastic Anisotropy of ?′-Cu6Sn5 and Cu3Sn Intermetallic Compounds;zhang;Crystals,2021

2. Insights into the atomic scale structure, bond characteristics and wetting behavior of Cu(001)/Cu6Sn5(110) interface: A first-principles investigation

3. Structural, electronic and thermo-elastic properties of Cu6Sn5 and Cu5Zn8 intermetallic compounds: First-principles investigation;wei;Intermetallics,2010

4. Influences of silicon carbide nanowires’ addition on IMC growth behavior of pure Sn solder during solid–liquid diffusion

5. Influence of alloying elements on stability and adhesion ability of TiAl/TiO 2 interface by first-principles calculations