Study on Single-Event Gate Rapture of Si VDMOSFET: failure mechanism and influence factors-Reference-Cited by-同舟云学术

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Study on Single-Event Gate Rapture of Si VDMOSFET: failure mechanism and influence factors

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Lang Lei¹,Luo Houcai¹,Chen Xianping²,Li Jincheng¹,Jiang Peixuan³

Affiliation:

1. Chongqing University,the College of Optoelectronic Engineering and Key Laboratory of Optoelectronic Technology & Systems Education Ministry,Chongqing,China

2. Chongqing University,the School of Electrical Engineering and State Key Laboratory of Power Transmission Equipment & System Security and New Technology,Chongqing,China

3. the College of Optoelectronic Engineering and Key Laboratory of Optoelectronic Technology & Systems Education Ministry,Chongqing,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873265.pdf?arnumber=9873265

Reference11 articles.

1. Simulation study of single-event gate rupture using radiation-hardened stripe cell power MOSFET structures

2. A conceptual model of a single-event gate-rupture in power MOSFETs

3. Atlas User ’ s Manual,2016

4. Investigation of Segr Effects on Power Vdmosfet for Various Heavy Ion Radiation;krishnamurthy;Electro International Conference,2019

5. Study on single-event burnout of SiC VDMOSFET: failure mechanism and influence factors

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