Thermal and Electrical Performance of Negative Capacitance FinFET on GaAs
Author:
Affiliation:
1. Shenzhen Institute of Advanced Technology Chinese Academy of Sciences,Shenzhen Institute of Advanced Electronic Materials,Shenzhen,China
2. Southeast University,School of Microelectronics,Nanjing,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873212.pdf?arnumber=9873212
Reference18 articles.
1. Modeling of anomalous thermodynamic properties using lattice dynamics and inelastic neutron scattering
2. Inelastic neutron scattering and lattice dynamics of minerals
3. Compact modeling of multiple-gate MOSFETs
4. A 14nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm2 SRAM cell size
5. Modeling of Negative Capacitance in Ferroelectric Thin Films
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