Phase Field Simulation of Electromigration-induced Failure in TSV Interconnect-Reference-Cited by-同舟云学术

Phase Field Simulation of Electromigration-induced Failure in TSV Interconnect

Published:2022-08-10 Issue: Volume: Page:
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Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Zeng Xin¹,Huang Zhiheng¹,Xiao Min¹,Meng Yuezhong¹,Yan Hui²,Li Qizhuo²

Affiliation:

1. Sun Yat-sen University,The Key Laboratory of Low-Carbon Chemistry & Energy Conservation of Guangdong Province, and School of Materials Science and Engineering,Guangzhou,China

2. Sun Yat-sen University,School of Computer Science and Engineering,Guangzhou,China

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873120.pdf?arnumber=9873120

Reference27 articles.

1. Electromigration—A brief survey and some recent results

2. Stress evolution due to electromigration in confined metal lines

3. A phase field model for failure in interconnect lines due to coupled diffusion mechanisms

4. Phase-Field Study of Electromigration-Induced Shape Evolution of a Transgranular Finger-Like Slit

5. Physics-based simulation of stress-induced and electromigration-induced voiding and their interactions in on-chip interconnects

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1. Simulation on Interplay Between Morphological Evolution and Defect in Polycrystalline TSV During EM;IEEE Transactions on Electron Devices;2024-01

2. Simulation on Microstructural Evolution under Electromigration in Backside Power Delivery Network;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08