Ion distribution and damage profile of Au irradiated GaN-Reference-Cited by-同舟云学术

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Ion distribution and damage profile of Au irradiated GaN

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Gao Yecheng¹,Cao Jiangcheng¹,Man Hongtao²

Affiliation:

1. Inspur Electronicic Information Industry Co., Ltd Shandong Inspur Artificial Intelligence Research Institute Co., Ltd,Country State Key Laboratory of High-End Server & Storage Technology,Jinan,China

2. Inspur Electronicic Information Industry Co., Ltd Shandong Inspur Artificial Intelligence Research Institute Co., Ltd,Country State Key Laboratory of High-End Server & Storage Technology,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09873162.pdf?arnumber=9873162

Reference11 articles.

1. Stopping power of electron gas and equipartition rule;lindhard,1964

2. Random and channeling stopping power of H in Si below 100keV

3. Damage profile and ion distribution of slow heavy ions in compounds

4. Comparative study of radiation damage in GaN and InGaN by 400 keV Au implantation

5. Predicting damage production in monoatomic and multi-elemental targets using stopping and range of ions in matter code: Challenges and recommendations

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