Study on The Influence Mechanism of TSV Structural Defects on High Frequency Transmission Characteristics
Author:
Affiliation:
1. Xiamen University of Technology,School of Materials Science and Engineering,Xiamen,China
2. China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China
Funder
Natural Science Foundation of Fujian Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9872527/9872536/09872571.pdf?arnumber=9872571
Reference13 articles.
1. Study of the Radio Frequency (RF) performance of a Wafer -Level Package (WLP) with Through Silicon Vias (TSVs) for the integration of RF-MEMS and micromachined waveguides in the context of 5G and Internet of Things (IoT) applications: Part 1-validation of the 3D modelling approach[J];iannacci;Microsystem Technologies,0
2. Parametric Delay Test of Post-Bond Through-Silicon Vias in 3-D ICs via Variable Output Thresholding Analysis
3. Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test
4. Prebond Testing of Weak Defects in TSVs
5. High RF performance TSV silicon carrier for high frequency application [C];ho;Electronic Components and Technology Conference 2008 ECTC 2008 58th IEEE,2008
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