The separation mechanism of 4H-SiC dicing by continuous laser-Reference-Cited by-同舟云学术

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The separation mechanism of 4H-SiC dicing by continuous laser

Published:2022-08-10 Issue: Volume: Page:
ISSN:
Container-title:2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Li Shaowei¹,Chen Pei²,Qin Fei²

Affiliation:

1. Beijing University of Technology,Institute of Electronics Packaging Technology & Reliability,Beijing,China

2. Beijing University of Technology,Institute of Electronics Packaging Technology & Reliability Beijing Key Laboratory of Advanced Manufacturing Technology,Beijing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9872527/9872536/09872681.pdf?arnumber=9872681

Reference7 articles.

1. Realization of ∼10 nm Features on Semiconductor Surfaces via Femtosecond Laser Direct Patterning in Far Field and in Ambient Air

2. Fracture strength of silicon wafer after different wafer treatment methods

3. Dual Laser Beam Asynchronous Dicing of 4H-SiC Wafer

4. Ablation Free Dicing of 4H-SiC Wafers with Feed Rates up to 200mm/s by Using Thermal Laser Separation;lewke;MRS Spring Meeting,2012

5. The optical absorption bands and their anisotropy in the various modifications of SiC

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1. Cohesive behavior of single crystalline silicon carbide scribing by nanosecond laser;2024-02-19

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