An Academic's Perspective on SiC Power Devices: Retrospection and Prognostication
Author:
Affiliation:
1. North Carolina State University,Progress Energy Distinguished University Electrical Engineering,Raleigh,NC,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955259.pdf?arnumber=9955259
Reference49 articles.
1. Implant Straggle Impact on 1.2 kV SiC Power MOSFET Static and Dynamic Parameters
2. Impact of Channel Length on Characteristics of 600 V 4H-SiC Inversion-Channel Planar MOSFETs;agarwal;IEEE European Solid-State Device Research Conference (ESSDERC),2019
3. Power MOSFETs with Superior High Frequency Figure-of-Merit;baliga;U S Patent 10 355 132,2019
4. Comparison of New Octagonal Cell Topology for 1.2 kV 4H-SiC JBSFETs with Linear and Hexagonal Topologies: Analysis and Experimental Results
5. On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET)
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