Peak channel temperature determination for an AlGaN/GaN HEMT with Raman Thermography and MTTF extraction for long term reliability
Author:
Affiliation:
1. STMicroelectronics,ADG R&D Power and Descretes,Catania,Italy
2. University of Bristol,Centre for Device Thermography and Reliability,Bristol,UK
Funder
STMicroelectronics
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955286.pdf?arnumber=9955286
Reference15 articles.
1. Temperature measurements of semiconductor devices - a review
2. Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits
3. Combined Infrared and Raman temperature measurements on device structures;sarua;CS MANTECH Conference,2006
4. Electric field dependence of optical phonon frequencies in wurtzite GaN observed in GaN high electron mobility transistors
5. A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Stress Voltage and Temperature on the Reliability of AlGaN/GaN HEMTs for RF and Microwave Application;physica status solidi (a);2023-12-07
2. Reliability Assessment of On-Wafer AlGaN/GaN HEMTs: The Impact of Electric Field Stress on the Mean Time to Failure;Micromachines;2023-09-26
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