Threshold Voltage Behavior and Short-Circuit Capability of p-Gate GaN HEMTs Depending on Drain- and Gate-Voltage Stress
Author:
Affiliation:
1. TU Dortmund,Chair of Energy Conversion,Dortmund,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955266.pdf?arnumber=9955266
Reference14 articles.
1. Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress
2. Experimental study of the short-circuit performance for a 600V normally-off p-gate GaN HEMT
3. Short Circuit Capability Characterization and Analysis of p-GaN Gate High-Electron-Mobility Transistors Under Single and Repetitive Tests
4. Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs
5. Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In Situ Detection of GaN $C_{\text{oss}}$ Changes Due to Aging for Device State-of-Health Determination in DC–DC Converters;IEEE Transactions on Power Electronics;2024-07
2. Analysis of Drain-Dependent Threshold Voltage and False Turn-On of Schottky-Type p-GaN Gate HEMT in Bridge-Leg Circuit;IEEE Transactions on Power Electronics;2024-02
3. Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High V DS;IEEE Transactions on Electron Devices;2023-07
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