Reverse Breakdown Time of Wide Bandgap Diodes-Reference-Cited by-同舟云学术

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Reverse Breakdown Time of Wide Bandgap Diodes

Published:2022-11-07 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Flicker Jack¹,Schrock Emily²,Kaplar Robert³

Affiliation:

1. Sandia National Laboratories,Power Electronics and Energy Conversion Systems,Albuquerque,NM,USA

2. Sandia National Laboratories,Directed Energy Missions,Albuquerque,NM,USA

3. Sandia National Laboratories,Semiconductor Material and Device Sciences,Albuquerque,NM,USA

Funder

National Nuclear Security Administration

U.S. Department of Energy

Office of Science

Basic Energy Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9955039/9955045/09955278.pdf?arnumber=9955278

Reference24 articles.

1. Ionization Rates for Electrons and Holes in Silicon

2. The early-time (E1) high-altitude electromagnetic pulse (HEMP) and its impact on the US power grid;savage;Report Meta,2010

3. High Voltage Modeling and Testing of Transformer, Line Interface Devices, and Bulk System Components Under Electromagnetic Pulse, Geomagnetic Disturbance, and other Abnormal Transients

4. High-Frequency Metal-Oxide Varistor Modeling Response to Early-time Electromagnetic Pulses

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wide Bandgap Semiconductors for LVDC Solid State Circuit Breaker applications;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

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