Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures-Reference-Cited by-同舟云学术

Electrical Characterization and Materials Stability Analysis of ${\rm La}_{2}{\rm O}_{3}/{\rm HfO}_{2}$ Composite Oxides on n-${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOS Capacitors With Different Annealing Temperatures

Published:2013-10 Issue:10 Volume:34 Page:1229-1231
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Lin Yueh Chin,Trinh Hai Dang,Chuang Ting Wei,Iwai Hiroshi,Kakushima Kuniyuki,Ahmet Parhat,Lin Chun Hsiung,Diaz Carlos H.,Chang Hui Chen,Jang Simon M.,Chang Edward Yi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6606835/06579646.pdf?arnumber=6579646

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