Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity-Reference-Cited by-同舟云学术

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Half-MOS Based Single-Poly EEPROM Cell With Program and Erase Bit Granularity

Published:2013-12 Issue:12 Volume:34 Page:1509-1511
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Torricelli Fabrizio,Milani Luca,Colalongo Luigi,Richelli Anna,Kovacs-Vajna Zsolt Miklos

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6669068/06650056.pdf?arnumber=6650056

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Embedded Flash and EEPROM for Smart IoT;Memories for the Intelligent Internet of Things;2018-04-20

2. Design of Multi-time Programmable Memory for PMICs;ETRI Journal;2015-12-01

3. Single-Poly-EEPROM Cell in Standard CMOS Process for Medium-Density Applications;IEEE Transactions on Electron Devices;2015-10

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