The Investigation on Diode Surge Current Capability of Reverse Conducting IGBT and The Impact of Gate Bias
Author:
Affiliation:
1. College of Electrical Engineering, Zhejiang University,Hangzhou,China
2. Electric Power Research Institute, Guangdong Power Grid Co., Ltd,Guangdong Provincial Key Laboratory of Electric Power Equipment Reliability,Guangzhou,510080
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579643.pdf?arnumber=10579643
Reference5 articles.
1. 1200V RC-IGBT based on CSTBTTM with Suppressed Dynamic Cres and Partial Lifetime Control
2. Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes
3. Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various V GS Biases
4. 6.5kV RCDC: For increased power density in IGBT-modules
5. An advanced bimode insulated gate transistor BIGT with low diode conduction losses under a positive gate bias
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