Gate Switching Instability of SiC MOSFETs under Simultaneously High Drain-Source Voltage and High Frequency Acceleration
Author:
Affiliation:
1. Chair of Power Electronics, Chemnitz University of Technology,Chemnitz,Germany
2. Siemens AG,Erlangen,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579621.pdf?arnumber=10579621
Reference9 articles.
1. Gate Oxide Reliability of 1.2 kV and 6.5 kV SiC MOSFETs under Stair-Shaped Increase of Positive and Negative Gate Bias
2. Dynamic Gate Stress Induced Threshold Voltage Drift of Silicon Carbide MOSFET
3. A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation
4. Bias Temperature Instability of Silicon Carbide Power MOSFET under AC Gate Stresses
5. AC-Stress Degradation and Its Anneal in SiC MOSFETs
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