Dynamic Charge Imbalance in Superjunction IGBTs: Design, Simulation, and Experimental Validation
Author:
Affiliation:
1. Mitsubishi Electric Corporation,Advanced Technology R&D Center,Hyogo,Japan,661-8661
2. Nisshinbo Micro Devices Inc.,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579470.pdf?arnumber=10579470
Reference9 articles.
1. IGBT History, State-of-the-Art, and Future Prospects
2. Superjunction Power Devices, History, Development, and Future Prospects
3. Turn-OFF Transient Analysis of Superjunction IGBT
4. The Superjunction Insulated Gate Bipolar Transistor Optimization and Modeling
5. Experimental evaluation of a 600 V super-junction planar PT IGBT prototype — Comparison with planar PT and trench gate PT technologies
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