Study on the device structure of GaInNAs(Sb) based solar cells for use in 4-junction tandem solar cells
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6304846/6317554/06317760.pdf?arnumber=6317760
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Brief Review of High Efficiency III-V Solar Cells for Space Application;Frontiers in Physics;2021-02-02
2. Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy;Solar Energy;2020-09
3. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states;Solar Energy Materials and Solar Cells;2019-09
4. Growth of 1‐eV GaNAsSb‐based photovoltaic cell on silicon substrate at different As/Ga beam equivalent pressure ratios;Progress in Photovoltaics: Research and Applications;2015-11-03
5. Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells;Progress in Photovoltaics: Research and Applications;2015-06-26
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