Metal Induced Contact Recombination Measured By Quasi-steady-state Photoluminescence
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8360188/8366001/08366451.pdf?arnumber=8366451
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cells;Progress in Photovoltaics: Research and Applications;2023-12-20
2. Recombination in Passivating Contacts: Investigation Into the Impact of the Contact Work Function on the Obtained Passivation;Solar RRL;2023-03-28
3. Uniformity analysis of metallization-induced recombination losses by photoluminescence imaging;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022
4. Spatially Resolved Determination of Metallization-Induced Recombination Losses Using Photoluminescence Imaging;IEEE Journal of Photovoltaics;2021-01
5. Progress in screen-printed metallization of industrial solar cells with SiOx/poly-Si passivating contacts;Solar Energy Materials and Solar Cells;2020-12
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