Effect of a ZnS intermediate layer on properties of Cu2ZnSnS4 films from sputtered Zn/CuSn precursors on Si (100) substrate
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7701171/7749395/07749871.pdf?arnumber=7749871
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Deep Dive into Cu2ZnSnS4 (CZTS) Solar Cells: A Review of Exploring Roadblocks, Breakthroughs, and Shaping the Future;Small;2024-03-12
2. Cu2ZnSnS4 from oxide precursors grown by pulsed laser deposition for monolithic CZTS/Si tandem solar cells;Applied Physics A;2022-03
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4. Improving the Cu2ZnSn(S,Se)4-Based Photovoltaic Conversion Efficiency by Back-Contact Modification;IEEE Transactions on Electron Devices;2021-06
5. Nitride-Based Interfacial Layers for Monolithic Tandem Integration of New Solar Energy Materials on Si: The Case of CZTS;ACS Applied Energy Materials;2020-04-09
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