Effect of a ZnS intermediate layer on properties of Cu2ZnSnS4 films from sputtered Zn/CuSn precursors on Si (100) substrate
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7701171/7749395/07749871.pdf?arnumber=7749871
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4. Nitride-Based Interfacial Layers for Monolithic Tandem Integration of New Solar Energy Materials on Si: The Case of CZTS;ACS Applied Energy Materials;2020-04-09
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