A comparison between quasi-steady state and transient photoconductance lifetimes in silicon ingots: simulations and measurements
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IEEE
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http://xplorestaging.ieee.org/ielx7/8360188/8366001/08366658.pdf?arnumber=8366658
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Contactless determination and parametrization of charge-carrier mobility in silicon as a function of injection level and temperature using time-resolved terahertz spectroscopy;Physical Review B;2023-02-23
2. Boosting Charge Carrier Mobilities in Upgraded Metallurgical Grade Silicon by Phosphorous Diffusion Gettering;Advanced Energy and Sustainability Research;2022-07-10
3. Improved accuracy of eddy-current sensor based carrier lifetime measurement using laser excitation;EPJ Photovoltaics;2022
4. Improving transient photoconductance lifetime measurements on ingots with deeper photogeneration;AIP Conference Proceedings;2018
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