Analysis of gaas photovoltaic device losses at high MOCVD growth rates-Reference-Cited by-同舟云学术

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Analysis of gaas photovoltaic device losses at high MOCVD growth rates

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC)
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Author:

Schmieder Kenneth J.,Lumb Matthew P.,Yakes Michael K.,Gonzalez Maria,Cunningham Paul D.,Khachatrian Ani,Bennett Mitchell F.,Hirst Louise C.,Kotulak Nicole A.,Pulwin Ziggy,Bailey Christopher G.,Hubbard Seth M.,Melinger Joseph S.,Ebert Chris W.,Walters Robert J.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7337615/7355590/07355957.pdf?arnumber=7355957

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gallium arsenide solar cells grown at rates exceeding 300 µm h−1 by hydride vapor phase epitaxy;Nature Communications;2019-07-26

2. Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications;ACS Energy Letters;2017-09-12

3. Effect of Growth Temperature on GaAs Solar Cells at High MOCVD Growth Rates;IEEE Journal of Photovoltaics;2017-01

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