Bidirectional Switching Characteristics Analysis Based on SiC MOSFET
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8603844/8623021/08623301.pdf?arnumber=8623301
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Switching Investigation of SiC MOSFET Based 4-Quadrant Switch;IEEE Access;2023
2. Effect of Commutation Control on Switching Frequency of SiC based Four Quadrant Switch;2021 National Power Electronics Conference (NPEC);2021-12-15
3. Power Loss in SiC MOSFET based Four-quadrant Switch;2021 National Power Electronics Conference (NPEC);2021-12-15
4. Monolithic Bidirectional Switch Based on GaN Gate Injection Transistors;2020 IEEE 29th International Symposium on Industrial Electronics (ISIE);2020-06
5. Interleaved Isolated Single-Phase PFC Converter Module for Three-Phase EV Charger;IEEE Transactions on Vehicular Technology;2020-05
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