Grounded body SOI(GBSOI) nMOSFET by wafer bonding-Reference-Cited by-同舟云学术

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Grounded body SOI(GBSOI) nMOSFET by wafer bonding

Published:1995-01 Issue:1 Volume:16 Page:2-4
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Won-Gu Kang ,Jong-Sun Lyu ,Sang-Won Kang ,KwyRo Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/8325/00363218.pdf?arnumber=363218

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for III–V Compound Semiconductors-to-Silicon Photonic Integrated Circuits;Journal of Electronic Materials;2008-06-03

2. Silicon MOSFETs on insulator with lithography-independent 100 nm channel length;Microelectronics Journal;1996-11

3. Lithography-independent nanometer silicon MOSFETs on insulator;IEEE Transactions on Electron Devices;1996

4. A Novel Body-Tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode;ETRI Journal;1996-01-01

5. Radiation Effects and Circuit Hardening;Cmos Memory Circuits

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