GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure-Reference-Cited by-同舟云学术

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GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure

Published:2012-06 Issue:11 Volume:24 Page:888-890
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Futami Mitsuaki,Shindo Takahiko,Koguchi Takayuki,Shinno Keisuke,Amemiya Tomohiro,Nishiyama Nobuhiko,Arai Shigehisa

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/6185664/06179305.pdf?arnumber=6179305

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Waveguide loss reduction of lateral-current-injection type GaInAsP/InP membrane Fabry–Pérot laser;Japanese Journal of Applied Physics;2017-04-20

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