Author:
Padovese J.A.,Rangel R.C.,Sasaki K.R.A.,Martino J.A.
Cited by
1 articles.
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1. Influence of the source/drain doping region on the reconfigurability of BESOI MOSFET;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28