Impact of Channel Implant Variation on RTN and Flicker Noise

Author:

Raffel Yannick1,Seidel Konrad1,Pirro Luca2,Lehmann Steffen2,Hoffmann Raik1,Olivo Ricardo1,Kampfe Thomas1,Heitmann Johannes3

Affiliation:

1. Fraunhofer-CNT, Fraunhofer-IPMS,Dresden,Germany

2. GLOBALFOUNDRIES Dresden, GLOBALFOUNDRIES,Dresden,Germany

3. Technische Universität Bergakademie Freiberg,Freiberg,Germany

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process;Memories - Materials, Devices, Circuits and Systems;2024-04

2. Dopant-Dependent Flicker Noise of Hafnium Oxide Ferroelectric Field Effect Transistor;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Low-Frequency Noise Sources and Back-Gate Coupling Effects in FDX-SOI Device;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

4. Impact of High-K Deposition Process on the Noise Immunity of FeFETs and their Applicability Towards In-Memory-Computing;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

5. Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO2-Based FeFETs for In-Memory-Computing Applications;ACS Applied Electronic Materials;2022-10-27

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