Lattice mobility of holes in strained and unstrained Si/sub 1-x/Ge/sub x/ alloys
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/3393/00116962.pdf?arnumber=116962
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1. Anisotropic Hole Mobility in Strained Si1-xGex/(001)Si;Solid State Phenomena;2011-11
2. SiGe/Si Heterojunction Bipolar Transistors and Circuits;Comprehensive Semiconductor Science and Technology;2011
3. Transport properties of silicon–germanium (SiGe) nanostructures and applications in devices;Silicon–Germanium (SiGe) Nanostructures;2011
4. Effect of Ge Composition on Infrared Detecting Performance of Strain Si/${\rm Si}_{1-{\rm x}-{\rm y}}{\rm Ge}_{\rm x} {\rm C} _{\rm y}$ Heterojunction on Preferentially Etched Silicon Substrate;IEEE Sensors Journal;2010-08
5. Observation of defects evolution in strained SiGe layers during strain relaxation;Materials Letters;2009-01
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