The paradox of compensated silicon-Reference-Cited by-同舟云学术

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The paradox of compensated silicon

Published:2008-07 Issue: Volume: Page:
ISSN:1097-2137
Container-title:2008 Conference on Optoelectronic and Microelectronic Materials and Devices
language:
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Author:

Cuevas Andres

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4799764/4802062/04802135.pdf?arnumber=4802135

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of the electrical properties of < 100 > Cz p-type solar-grade silicon wafers against the high-temperature processes;Applied Physics A;2021-05-11

2. Temperature Coefficients of Compensated Silicon Solar Cells – Influence of Ingot Position and Blend-in-ratio;Energy Procedia;2015-08

3. Conceptual Advances: Recombination Properties;Springer Theses;2014

4. Crystalline Silicon Solar Cells;Comprehensive Renewable Energy;2012

5. New resistivity/dopant density model for compensated-Si;Transactions of Nonferrous Metals Society of China;2011-05

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